Journal
SCIENTIFIC REPORTS
Volume 7, Issue -, Pages -Publisher
NATURE PORTFOLIO
DOI: 10.1038/srep40933
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Funding
- Office of Naval Research (ONR) [N00014-09-1-1075]
- ONR DURIP grant [N00014-12-1-0888]
- Tufts University FRAC award
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This paper presents an on-chip device that can perform gigahertz-rate amplitude modulation and switching of broadband terahertz electromagnetic waves. The operation of the device is based on the interaction of confined THz waves in a novel slot waveguide with an electronically tunable two dimensional electron gas (2DEG) that controls the loss of the THz wave propagating through this waveguide. A prototype device is fabricated which shows THz intensity modulation of 96% at 0.25 THz carrier frequency with low insertion loss and device length as small as 100 microns. The demonstrated modulation cutoff frequency exceeds 14 GHz indicating potential for the high-speed modulation of terahertz waves. The entire device operates at room temperature with low drive voltage (<2 V) and zero DC power consumption. The device architecture has potential for realization of the next generation of on-chip modulators and switches at THz frequencies.
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