Large-roll growth of 25-inch hexagonal BN monolayer film for self-release buffer layer of free-standing GaN wafer

Hexagonal boron nitride (h-BN) is known as promising 2D material with a wide band-gap (similar to 6 eV). However, the growth size of h-BN film is strongly limited by the size of reaction chamber. Here, we demonstrate the large-roll synthesis of monolayer and controllable sub-monolayer h-BN film on wound Cu foil by low pressure chemical vapor deposition (LPCVD) method. By winding the Cu foil substrate into mainspring shape supported by a multi-prong quartz fork, the reactor size limit could be overcome by extending the substrate area to a continuous 2D curl of plane inward. An extremely large-size monolayer h-BN film has been achieved over 25 inches in a 1.2 '' tube. The optical band gap of h-BN monolayer was determined to be 6.0 eV. The h-BN film was uniformly transferred onto 2 '' GaN or 4 '' Si wafer surfaces as a release buffer layer. By HVPE method, overgrowth of thick GaN wafer over 200 mu m has been achieved free of residual strain, which could provide high quality homo-epitaxial substrate.