Journal
SCIENTIFIC REPORTS
Volume 4, Issue -, Pages -Publisher
NATURE PUBLISHING GROUP
DOI: 10.1038/srep06722
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Funding
- U.S. Department of Defense (DARPA Young Faculty Award) [N66001-11-1-4152]
- National Science Foundation (NSF) through the National Nanotechnology Infrastructure Network program
- Characterization Facility - NSF through the Materials Research Science and Engineering Center
- Office of Naval Research Young Investigator Award
- 3M Science and Technology Fellowship
- University of Minnesota Doctoral Dissertation Fellowship
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We demonstrate broadband non-resonant squeezing of terahertz (THz) waves through an isolated 2-nm-wide, 2-cm-long slit (aspect ratio of 10(7)), representing a maximum intensity enhancement factor of one million. Unlike resonant nanogap structures, a single, effectively infinitely-long slit passes incident electromagnetic waves with no cutoff, enhances the electric field within the gap with a broad 1/f spectral response, and eliminates interference effects due to finite sample boundaries and adjacent elements. To construct such a uniform, isolated slit that is much longer than the millimeter-scale spot of a THz beam, we use atomic layer lithography to pattern vertical nanogaps in a metal film over an entire 4-inch wafer. We observe an increasing field enhancement as the slit width decreases from 20 nm to 2 nm, in agreement with numerical calculations.
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