Journal
SCIENTIFIC REPORTS
Volume 4, Issue -, Pages -Publisher
NATURE PUBLISHING GROUP
DOI: 10.1038/srep05951
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Funding
- National Natural Science Foundation of China [61025021, 60936002, 51072089, 61020106006]
- National Science and Technology Major Project [2011ZX02403-002, 2011ZX02708-002]
- State Key Development Program for Basic Research of China [2011CBA00602]
- Special Fund for Agro-scientific Research in the Public Interest [201303107]
- Ministry of Education Scholarship of China
- Natural Sciences and Engineering Research Council of Canada (NSERC)
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Recently, two-dimensional materials such as molybdenum disulphide (MoS2) have been demonstrated to realize field effect transistors (FET) with a large current on-off ratio. However, the carrier mobility in backgate MoS2 FET is rather low (typically 0.5-20 cm(2)/V.s). Here, we report a novel field-effect Schottky barrier transistors (FESBT) based on graphene-MoS2 heterojunction (GMH), where the characteristics of high mobility from graphene and high on-off ratio from MoS2 are properly balanced in the novel transistors. Large modulation on the device current (on/off ratio of 10(5)) is achieved by adjusting the backgate (through 300 nm SiO2) voltage to modulate the graphene-MoS2 Schottky barrier. Moreover, the field effective mobility of the FESBT is up to 58.7 cm(2)/V.s. Our theoretical analysis shows that if the thickness of oxide is further reduced, a subthreshold swing (SS) of 40 mV/decade can be maintained within three orders of drain current at room temperature. This provides an opportunity to overcome the limitation of 60 mV/decade for conventional CMOS devices. The FESBT implemented with a high on-off ratio, a relatively high mobility and a low subthreshold promises low-voltage and low-power applications for future electronics.
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