4.7 Article

Pushing the resolution of photolithography down to 15nm by surface plasmon interference

Journal

SCIENTIFIC REPORTS
Volume 4, Issue -, Pages -

Publisher

NATURE PUBLISHING GROUP
DOI: 10.1038/srep05618

Keywords

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Funding

  1. National Basic Research Program of China (973 program) [2013CBA01702, 2013CB328801]
  2. National Natural Science Founding of China [61235002, 61077007, 61205053]

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A deep ultraviolet plasmonic structure is designed and a surface plasmon interference lithography method using the structure is proposed to generate large-area periodic nanopatterns. By exciting the anti-symmetric coupled surface plasmon polaritons in the structure, ultrahigh resolution periodic patterns can be formed in a photoresist. The resolution of the generated patterns can be tuned by changing the refractive index and thickness of the photoresist. We demonstrate numerically that one-dimensional and two-dimensional patterns with a half-pitch resolution of 14.6 nm can be generated in a 25 nm-thick photoresist by using the structure under 193 nm illumination. Furthermore, the half-pitch resolution of the generated patterns can be down to 13 nm if high refractive index photoresists are used. Our findings open up an avenue to push the half-pitch resolution of photolithography towards 10 nm.

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