4.7 Article

Magnetic field and temperature sensing with atomic-scale spin defects in silicon carbide

Journal

SCIENTIFIC REPORTS
Volume 4, Issue -, Pages -

Publisher

NATURE PUBLISHING GROUP
DOI: 10.1038/srep05303

Keywords

-

Funding

  1. Bavarian Ministry of Economic Affairs, Infrastructure, Transport and Technology, Germany, German Research Foundation (DFG) [AS310/4]
  2. RFBR [13-02-00821, 14-02-91344]
  3. DFG
  4. University of Wuerzburg

Ask authors/readers for more resources

Quantum systems can provide outstanding performance in various sensing applications, ranging from bioscience to nanotechnology. Atomic-scale defects in silicon carbide are very attractive in this respect because of the technological advantages of this material and favorable optical and radio frequency spectral ranges to control these defects. We identified several, separately addressable spin-3/2 centers in the same silicon carbide crystal, which are immune to nonaxial strain fluctuations. Some of them are characterized by nearly temperature independent axial crystal fields, making these centers very attractive for vector magnetometry. Contrarily, the zero-field splitting of another center exhibits a giant thermal shift of -1.1 MHz/K at room temperature, which can be used for thermometry applications. We also discuss a synchronized composite clock exploiting spin centers with different thermal response.

Authors

I am an author on this paper
Click your name to claim this paper and add it to your profile.

Reviews

Primary Rating

4.7
Not enough ratings

Secondary Ratings

Novelty
-
Significance
-
Scientific rigor
-
Rate this paper

Recommended

No Data Available
No Data Available