Journal
SCIENTIFIC REPORTS
Volume 4, Issue -, Pages -Publisher
NATURE RESEARCH
DOI: 10.1038/srep05649
Keywords
ELECTRICAL AND ELECTRONIC ENGINEERING; TWO-DIMENSIONAL MATERIALS
Categories
Funding
- National Natural Science Foundation of China (NSFC) [21373196]
- Recruitment Program of Global Experts
- Fundamental Research Funds for the Central Universities [WK2060140014, WK2340000050]
- University of California San Diego
- Directorate For Engineering
- Div Of Electrical, Commun & Cyber Sys [1351980] Funding Source: National Science Foundation
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Strain engineering'' in functional materials has been widely explored to tailor the physical properties of electronic materials and improve their electrical and/or optical properties. Here, we exploit both in plane and out of plane uniaxial tensile strains in MoS2 to modulate its band gap and engineer its optical properties. We utilize X-ray diffraction and cross-sectional transmission electron microscopy to quantify the strains in the as-synthesized MoS2 nanosheets and apply measured shifts of Raman-active modes to confirm lattice strain modification of both the out-of-plane and in-plane phonon vibrations of the MoS2 nanosheets. The induced band gap evolution due to in-plane and out-of-plane tensile stresses is validated by photoluminescence (PL) measurements, promising a potential route for unprecedented manipulation of the physical, electrical and optical properties of MoS2.
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