Journal
SCIENTIFIC REPORTS
Volume 4, Issue -, Pages -Publisher
NATURE PUBLISHING GROUP
DOI: 10.1038/srep06395
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Funding
- International Center for Young Scientists (ICYS) of the National Institute for Materials Science (NIMS)
- Tokodai Institute for Elemental Strategy (TIES)
- Advanced Environmental Materials, Green Network of Excellence (GRENE)
- Low-Carbon Research Network (LCnet)
- Nanotechnology Platform projects - Ministry of Education, Culture, Sports, and Technology (MEXT) in Japan
- Grants-in-Aid for Scientific Research [25249054] Funding Source: KAKEN
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Although several high-k insulators have been deposited on the diamond for metal-insulator-semiconductor field effect transistors (MISFETs) fabrication, the k values and current output are still not fully satisfactory. Here, we present a high-k ZrO2 layer on the diamond for the MISFETs. The k value for ZrO2 is determined by capacitance-voltage characteristic to be 15.4. The leakage current density is smaller than 4.8 x 10(-5) A.cm(-2) for the gate voltage ranging from -4.0 to 2.0 V. The low on-resistance MISFET is obtained by eliminating source/drain-channel interspaces, which shows a large current output and a high extrinsic transconductance. The high-performance diamond MISFET fabrication will push forward the development of power devices.
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