Journal
SCIENTIFIC REPORTS
Volume 4, Issue -, Pages -Publisher
NATURE PUBLISHING GROUP
DOI: 10.1038/srep04591
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Funding
- Ministry of Science and Technology of China [2009CB929202, 2009CB929203]
- National Science Foundation of China [10721404, 11179008, 51332001]
- Special Fund of Tsinghua for basic research [201110810625]
- Tsinghua National Laboratory for Information Science and Technology (TNList) Cross-discipline Foundation
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Strain has been widely used to manipulate the properties of various kinds of materials, such as ferroelectrics, semiconductors, superconductors, magnetic materials, and strain engineering'' has become a very active field. For strain-based information storage, the non-volatile strain is very useful and highly desired. However, in most cases, the strain induced by converse piezoelectric effect is volatile. In this work, we report a non-volatile strain in the (001)-oriented Pb(Mg1/3Nb2/3)O-3-PbTiO3 single crystals and demonstrate an approach to measure the non-volatile strain. A bipolar loop-like S-E curve is revealed and a mechanism involving 109 degrees ferroelastic domain switching is proposed. The non-volatile high and low strain states should be significant for applications in information storage.
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