Journal
SCIENTIFIC REPORTS
Volume 3, Issue -, Pages -Publisher
NATURE PUBLISHING GROUP
DOI: 10.1038/srep02368
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Funding
- National Natural Science Foundation of China [21171035]
- Key Grant Project of Chinese Ministry of Education [313015]
- Science and Technology Commission of Shanghai-based Innovation Action Plan'' Project [10JC1400100]
- Ph.D. Programs Foundation of Ministry of Education of China [20110075110008]
- Fundamental Research Funds for the Central Universities
- Shanghai Leading Academic Discipline Project [B603]
- Program of Introducing Talents of Discipline to Universities [111-2-04]
- MEXT of Japan [24760285, 24760032]
- Grants-in-Aid for Scientific Research [24760032, 24760285] Funding Source: KAKEN
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The typical photodetectors can only detect one specific optical spectral band, such as InGaAs and graphene-PbS quantum dots for near-infrared (NIR) light detection, CdS and Si for visible light detection, and ZnO and III-nitrides for UV light detection. So far, none of the developed photodetector can achieve the multicolor detection with arbitrary spectral selectivity, high sensitivity, high speed, high signal-to-noise ratio, high stability, and simplicity (called 6S requirements). Here, we propose a universal strategy to develop multicolor photodetectors with arbitrary spectral selectivity by integrating various semiconductor nanostructures on a wide-bandgap semiconductor or an insulator substrate. Because the photoresponse of each spectral band is determined by each semiconductor nanostructure or the semiconductor substrate, multicolor detection satisfying 6S requirements can be readily satisfied by selecting the right semiconductors.
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