General Route to ZnO Nanorod Arrays on Conducting Substrates via Galvanic-cell-based approach

Wurtzite ZnO nanorod exhibits many unique properties, which make it promising for various optoelectronic applications. To grow well-aligned ZnO nanorod arrays on various substrates, a seed layer is usually required to improve the density and vertical alignment. The reported works about seedless hydrothermal synthesis either require special substrates, or require external electrical field to enhance the ZnO nucleation. Here, we report a general method for the one-pot synthesis of homogenous and well-aligned ZnO nanorods on common conducting substrates without a seed layer. This method, based on the galvanic-cell structure, makes use of the contact potential between different materials as the driving force for ZnO growth. It is applicable to different conducting substrates at low temperature. More importantly, the as-grown ZnO nanorods show enhanced photoelectric response. This unique large scale low-temperature processing method could be of great importance for the application of ZnO nanostructures.