Journal
SCIENTIFIC REPORTS
Volume 3, Issue -, Pages -Publisher
NATURE RESEARCH
DOI: 10.1038/srep01634
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Funding
- NSF [DMR-1008242, DMR-1006605]
- Brazilian National Council for Scientific and Technological Development (CNPq)
- Division Of Materials Research
- Direct For Mathematical & Physical Scien [1006605, 1008242] Funding Source: National Science Foundation
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Semiconducting molybdenum disulfphide has emerged as an attractive material for novel nanoscale optoelectronic devices due to its reduced dimensionality and large direct bandgap. Since optoelectronic devices require electron-hole generation/recombination, it is important to be able to fabricate ambipolar transistors to investigate charge transport both in the conduction band and in the valence band. Although n-type transistor operation for single-layer and few-layer MoS2 with gold source and drain contacts was recently demonstrated, transport in the valence band has been elusive for solid-state devices. Here we show that a multi-layer MoS2 channel can be hole-doped by palladium contacts, yielding MoS2 p-type transistors. When two different materials are used for the source and drain contacts, for example hole-doping Pd and electron-doping Au, the Schottky junctions formed at the MoS2 contacts produce a clear photovoltaic effect.
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