Journal
SCIENTIFIC REPORTS
Volume 2, Issue -, Pages -Publisher
NATURE RESEARCH
DOI: 10.1038/srep00853
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Funding
- NSFC [10774003, 11274016]
- National 973 Projects, MOST of China [2007CB936200, 2013CB932604]
- Fundamental Research Funds for the Central Universities
- National Foundation for Fostering Talents of Basic Science [J1030310, J1103205]
- Program for New Century Excellent Talents in University of MOE of China
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Opening a sizable band gap without degrading its high carrier mobility is as vital for silicene as for graphene to its application as a high-performance field effect transistor (FET). Our density functional theory calculations predict that a band gap is opened in silicene by single-side adsorption of alkali atom as a result of sublattice or bond symmetry breaking. The band gap size is controllable by changing the adsorption coverage, with an impressive maximum band gap up to 0.50 eV. The ab initio quantum transport simulation of a bottom-gated FET based on a sodium-covered silicene reveals a transport gap, which is consistent with the band gap, and the resulting on/off current ratio is up to 10(8). Therefore, a way is paved for silicene as the channel of a high-performance FET.
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