Journal
RSC ADVANCES
Volume 4, Issue 62, Pages 33039-33046Publisher
ROYAL SOC CHEMISTRY
DOI: 10.1039/c4ra05578k
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Funding
- National Basic Research Program [2011CB933303]
- National Natural Science Foundation of China (NSFC) [21321001, 21371012]
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Thin polythiophene film prepared via electrochemical polymerization has been successfully used as the hole-transporting layer in CH3NH3PbI3 perovskite solar cells, affording a series of ITO/polythiophene/CH3NH3PbI3/C-60/BCP/Ag devices. The highest occupied molecular orbit (HOMO) and lowest unoccupied molecular orbit (LUMO) of the polythiophene film are determined as -5.20 eV and -3.12 eV, respectively, which match well with that of CH3NH3PbI3 perovskite material. In addition, a promising power conversion efficiency of 11.8%, featuring a high fill factor of 0.707, good open voltage of 1.03 V and short current density of 16.2 mA cm(-2), has been obtained, which renders polythiophene as an effective competitor to spiro-OMeTAD in perovskite solar cells. Furthermore, this work provides a simple, prompt, controllable and economic approach for the preparation of hole-transporting layer, which would undoubtedly yield new insight into the industrial production of perovskite solar cells.
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