Journal
RSC ADVANCES
Volume 4, Issue 92, Pages 50891-50896Publisher
ROYAL SOC CHEMISTRY
DOI: 10.1039/c4ra07400a
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Funding
- National Natural Science Foundation of China [11372266, 11272274]
- Hunan Provincial Natural Science Foundation of China [12JJ1007]
- Specialized Research Fund for the Doctoral Program of Higher Education [20114301110004]
- Foundation for the Author of National Excellent Doctoral Dissertation of PR China [201143]
- Innovation Fund Project for Graduate Student of Hunan Province [CX2013B260]
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A large resistive switching (RS) of 4 orders of magnitude is observed in Pt/Bi3.15Nd0.85Ti3O12(BNT)/HfO2/Pt capacitors. The studies of the polarization-voltage loop, capacitance-voltage loop, the fitting current-voltage data, and the current-temperature curves suggest that the RS is mainly induced by the formation/rupture of the conductive filament which is induced by inserting the HfO2 dielectric layer in the Pt/BNT/Pt capacitor. The results demonstrate a possibility to control the RS characteristics by modulating the RS mechanism in the polycrystalline ferroelectric thin films.
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