Journal
ACS PHOTONICS
Volume 2, Issue 8, Pages 1013-1018Publisher
AMER CHEMICAL SOC
DOI: 10.1021/acsphotonics.5b00305
Keywords
light-emitting diode; efficiency droop; nitride semiconductor; solid-state lighting
Categories
Funding
- Samsung Electronics
- Sandia National Laboratories
- U.S. National Science Foundation
- Korea Institute for Advancement of Technology
- Sandia's Solid-State Lighting Sciences Center
- Energy Frontier Research Center - U.S. Department of Energy, Office of Basic Energy Sciences
- Basic Science Research Program through National Research Foundation (NRF) of Korea - Ministry of Education [2014R1A1A2054092]
Ask authors/readers for more resources
The efficiency of Ga0.87In0.13N/GaN single and multiple quantum well (QW) light-emitting diodes is investigated under photoluminescence (PL) and electro-luminescence (EL) excitation. By measuring the laser spot area (knife-edge method) and the absorbance of the GaInN QW (transmittance/reflectance measurements), the PL excitation density can be converted to an equivalent EL excitation density. The EL efficiency droop-onset occurs at an excitation density of 2.08 x 10(26) cm(-3) s(-1) (j = 10 A/cm(2)), whereas no PL efficiency droop is found for excitation densities as high as 3.11 X 10(27) cm(-3) s(-1) (j = 149 A/cm(2)). Considering Shockley Read Hall, radiative, and Auger rcombination and including carrier leakage shows that the EL efficiency droop is consistent with a reduction of injection efficiency.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available