Journal
ACS PHOTONICS
Volume 2, Issue 3, Pages 417-424Publisher
AMER CHEMICAL SOC
DOI: 10.1021/ph500464j
Keywords
nanogap; thin-film sensing; atomic layer deposition; atomic layer lithography; finite element modeling; Hybridizable Discontinuous Galerkin (HDG) method; terahertz nanophotonics
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Funding
- U.S. Department of Defense (DARPA Young Faculty Award) [N66001-11-1-4152]
- National Science Foundation (CAREER Award)
- AFOSR [FA9550-11-1-0141, FA9550-12-0357]
- Singapore-MIT Alliance
- National Science Foundation (NSF) through the National Nanotechnology Infrastructure Network program
- NSF through the Materials Research Science and Engineering Center
- Office of Naval Research Young Investigator Award
- 3M Science and Technology Fellowship
- University of Minnesota Doctoral Dissertation Fellowship
- Direct For Biological Sciences
- Div Of Biological Infrastructure [1054191] Funding Source: National Science Foundation
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We experimentally show that terahertz (THz) waves confined in sub-10 nm metallic gaps can detect refractive index changes caused by only a 1 nm thick (similar to lambda/106) dielectric overlayer. We use atomic layer lithography to fabricate a wafer-scale array of annular nanogaps. Using THz time-domain spectroscopy in conjunction with atomic layer deposition, we measure spectral shifts of a THz resonance peak with increasing Al2O3 film thickness in 1 nm intervals. Because of the enormous mismatch in length scales between THz waves and sub-10 nm gaps, conventional modeling techniques cannot readily be used to analyze our results. We employ an advanced finite-element-modeling (FEM) technique, Hybridizable Discontinuous Galerkin (HDG) scheme, for full three-dimensional modeling of the resonant transmission of THz waves through an annular gap that is 2 nm in width and 32 mu m in diameter. Our multiscale 3D FEM technique and atomic layer lithography will enable a series of new investigations in THz nanophotonics that has not been possible before.
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