4.6 Article

Fabrication of micron-SiO2@nano-Ag based conductive line patterns through silk-screen printing

Journal

RSC ADVANCES
Volume 4, Issue 88, Pages 47781-47787

Publisher

ROYAL SOC CHEMISTRY
DOI: 10.1039/c4ra08007f

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Funding

  1. National Nature Science Foundation of China [21071112, 21471119]
  2. large-scale Instrument and Equipment Sharing Foundation of Wuhan University [LF20110063]

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Here we present a cheap alternative for the fabrication of conductive line patterns printed on a flexible PI substrate at intermediate temperature. In order to achieve this purpose, a low-cost and water-soluble screen printing conductive paste was prepared, with micron-SiO2@nano-Ag particles as the conductive filler. Variations in the filling content of micron-SiO2@nano-Ag, the addition of the coupling agent, curing temperature and time can remarkably affect the electrical and mechanical performance of the conductive paste. The optimal sheet resistance (at 62 m Omega square(-1)) and mechanical performance of the paste were achieved under the curing conditions of 140 degrees C for 30 min, with the filling content of 53.6 wt% of micron-SiO2@nano-Ag (32.4 wt% of Ag) and 1.0 wt% of the coupling agent APTES. The conductive mechanism of the paste was discussed according to the percolation theory. The conductive line patterns fabricated through silk-screen printing were applied to be linked with a LED into a circuit, suggesting that the paste would have a potential application in electronic devices.

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