Journal
RSC ADVANCES
Volume 3, Issue 39, Pages 17998-18001Publisher
ROYAL SOC CHEMISTRY
DOI: 10.1039/c3ra43064b
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Funding
- National Natural Sciences Foundation of China [50671042]
- Ph.D. Innovation Programs Foundation of Jiangsu Province [CXZZ12_0671]
- Key Laboratory of Materials Modification (Dalian University of Technology), Ministry of Education [DP1051102]
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Si nanocrystals (Si-ncs) were prepared from n-type Si (100) wafers by using high-current pulsed electron beam irradiation in vacuum. High density (9.7 x 10(14) cm(-2)) ultrafine Si-ncs (similar to 3 nm) embedded in amorphous Si layers (similar to 60 nm) exhibit blue photoluminescence emission at room temperature which can be attributed to the quantum confinement size effect. The pulse number is a key parameter which influences the photoluminescence intensity. Possible formation mechanisms of Si-ncs are discussed.
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