Journal
OPTICAL MATERIALS EXPRESS
Volume 4, Issue 5, Pages 1067-1076Publisher
OPTICAL SOC AMER
DOI: 10.1364/OME.4.001067
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Funding
- State Key Laboratory of Information Photonics and Optical Communications
- National Natural Science Foundation of China [51072182, 51172208, 61274017]
- Fundamental Research Funds for the Central Universities [2014RC0906]
- Qianjiang Talent Program of Zhejiang Province [QJD1202004]
- National Basic Research Program of China [2010CB933501, 2010CB923202]
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Laser molecular beam epitaxy technology has been employed to deposit beta-gallium oxide (beta-Ga2O3) on (0001) sapphire substrates. After optimizing the growth parameters, (2) overbar01)-oriented beta-Ga2O3 thin film was obtained. Ultraviolet-visible absorption spectrum demonstrates that the prepared beta-Ga2O3 thin film shows excellent solar-blind ultraviolet (UV) characteristic with a band gap of 5.02 eV. A prototype photodetector device with a metal-semiconductor-metal structure has been fabricated using high quality beta-Ga2O3 film. The device exhibits obvious photoresponse under 254 nm UV light irradiation, suggesting a potential application in solar-blind photodetectors.(C) 2014 Optical Society of America
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