Journal
NPG ASIA MATERIALS
Volume 6, Issue -, Pages -Publisher
NATURE PORTFOLIO
DOI: 10.1038/am.2014.103
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Funding
- Nano R&D Program through the National Research Foundation (NRF) of Korea [NRF-2009-0082489]
- Institute for Basic Science (IBS) in Korea
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Undercoordinated indium (In*) is found to be an intrinsic defect that acts as a strong electron trap in amorphous InGaZnO4. Conduction electrons couple with the under-coordinated In* via Coulomb attraction, which is the driving force for the formation of an In*-M (M=In, Ga, or Zn) bond. The new structure is stable in the electron-trapped (2-) charge state, and we designate it as an intrinsic (In*-M)(2-) center in amorphous InGaZnO4. The (In*-M)(2-) centers are preferentially formed in heavily n-doped samples, resulting in a doping limit. They are also formed by electrical/optical stresses, which generate excited electrons, resulting in a metastable change in their electrical properties.
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