4.7 Article

Annealing-free fabrication of highly oxidation-resistive copper nanowire composite conductors for photovoltaics

Journal

NPG ASIA MATERIALS
Volume 6, Issue -, Pages -

Publisher

NATURE PUBLISHING GROUP
DOI: 10.1038/am.2014.36

Keywords

chemical reduction treatment; copper nanowire; indium-free transparent electrodes; photovoltaic; thermal oxidation resistance

Funding

  1. National Research Foundation (NRF) of Korea - Korea government [2012R1A3A2026417]
  2. Basic Research Laboratory (BRL) Program [2011-8-2048]
  3. third Stage of Brain Korea 21 Plus Project
  4. National Research Council of Science & Technology (NST), Republic of Korea [KK-1402-C0] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
  5. National Research Foundation of Korea [2012R1A3A2026417, 2011-0020285] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)

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Copper nanowire (CuNW)-network film is a promising alternative to the conventional indium tin oxide (ITO) as a transparent conductor. However, thermal instability and the ease of oxidation hinder the practical applications of CuNW films. We present oxidation-resistive CuNW-based composite electrodes that are highly transparent, conductive and flexible. Lactic acid treatment effectively removes both the organic capping molecule and the surface oxide/hydroxide from the CuNWs, allowing direct contact between the nanowires. This chemical approach enables the fabrication of transparent electrodes with excellent properties (19.8 Omega sq(-1) and 88.7% at 550 nm) at room temperature without any atmospheric control. Furthermore, the embedded structure of CuNWs with Al-doped ZnO (AZO) dramatically improves the thermal stability and oxidation resistance of CuNWs. These AZO/CuNW/AZO composite electrodes exhibit high transparency (83.9% at 550 nm) and low sheet resistance (35.9 Omega sq(-1)), maintaining these properties even with a bending number of 1280 under a bending radius of 2.5 mm. When implemented in a Cu(In1-x, Gax)(S,Se)(2) thin-film solar cell, this composite electrode demonstrated substantial potential as a low-cost (Ag-, In-free), high performance transparent electrode, comparable to a conventional sputtered ITO-based solar cell.

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