Journal
NPG ASIA MATERIALS
Volume 4, Issue -, Pages -Publisher
NATURE PUBLISHING GROUP
DOI: 10.1038/am.2012.10
Keywords
density functional theory; electric field; graphene; h-BN sheet; quasiparticle correction; transport properties
Categories
Funding
- NSFC [10774003]
- National 973 Projects (MOST of China) [2007CB936200]
- Program for New Century Excellent Talents in University of MOE
- Fundamental Research Funds for the Central Universities
- National Foundation for Fostering Talents of Basic Science of China
- MEXT in Japan
- Nebraska Research Initiative
- DOE in the United States [DE-EE0003174]
- EPSCoR
- Office Of The Director [1010674] Funding Source: National Science Foundation
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Opening a tunable and sizable band gap in single-layer graphene (SLG) without degrading its structural integrity and carrier mobility is a significant challenge. Using density functional theory calculations, we show that the band gap of SLG can be opened to 0.16 eV (without an electric field) and 0.34 eV (with a strong electric field) when properly sandwiched between two hexagonal boron nitride single layers. The zero-field band gaps are increased by more than 50% when the many-body effects are included. The ab initio quantum transport simulation of a dual-gated field effect transistor (FET) made of such a sandwich structure reveals an electric-field-enhanced transport gap, and the on/off current ratio is increased by a factor of 8.0 compared with that of a pure SLG FET. The tunable and sizeable band gap and structural integrity render this sandwich structure a promising candidate for high-performance SLG FETs. NPG Asia Materials (2012) 4, e6; doi:10.1038/am. 2012.10; published online 17 February 2012
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