Control of the Diameters of Cu2O Nanowires Fabricated by the Thermal Stress-Induced Method

Well-aligned Cu2O nanowires are fabricated from deposited Cu thin films by the thermal stress-induced method, without employing any templates, any catalysts and vacuum system. The X-ray diffraction (XRD) and transmission electron microscopy (TEM) results on samples with direct cooling process and gradual cooling process indicate that nanowires growing on the substrate are mainly composed of CuO, while nanowires growing on the hillocks are mainly composed of Cu2O. Adjusting the thickness of the deposited Cu film is proposed to be the optimum way to fabricate Cu2O nanowires with different diameters. Taking into account that the length of the Cu2O nanowires mainly depends on the heating and gradual cooling time, the proper management of Cu film thickness and time can give rise to Cu2O nanowires with controllable diameters and aspect ratios. The Cu2O nanowires with fine structures and controllable diameters open the possibilities for their various kinds of applications such as the next-generation electronic and optoelectronic devices.