Journal
MATERIALS
Volume 11, Issue 9, Pages -Publisher
MDPI
DOI: 10.3390/ma11091761
Keywords
ZnO thin film transistors; solution process; interfacial modification layers; stability; contact potential barrier
Categories
Funding
- National 111 Center [B12026]
- National Natural Science Foundation of China [61604119, 61704131]
- Natural Science Foundation of Shaanxi Province [2017JQ6002, 2017JQ6031]
- Young Elite Scientists Sponsorship Program by CAST
- Fundamental Research Funds for the Central Universities
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This paper reports low temperature solution processed ZnO thin film transistors (TFTs), and the effects of interfacial passivation of a 4-chlorobenzoic acid (PCBA) layer on device performance. It was found that the ZnO TFTs with PCBA interfacial modification layers exhibited a higher electron mobility of 4.50 cm(2) V-1 s(-1) compared to the pristine ZnO TFTs with a charge carrier mobility of 2.70 cm(2) V-1 s(-1). Moreover, the ZnO TFTs with interfacial modification layers could significantly improve device shelf-life stability and bias stress stability compared to the pristine ZnO TFTs. Most importantly, interfacial modification layers could also decrease the contact potential barrier between the source/drain electrodes and the ZnO films when using high work-function metals such as Ag and Au. These results indicate that high performance TFTs can be obtained with a low temperature solution process with interfacial modification layers, which strongly implies further potential for their applications.
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