Journal
MATERIALS
Volume 6, Issue 9, Pages 4259-4267Publisher
MDPI
DOI: 10.3390/ma6094259
Keywords
nanoindentation; pop-ins; AlN thin films; transmission electron microscopy
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Funding
- National Science Council of Taiwan [NSC102-2221-E-214-016]
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Nanoindentation-induced multiple pop-ins were observed in the load-displacement curves when the mechanical responses of AlN films grown on c-plane sapphire substrates were investigated by using Berkovich indenters. No evidence of phase transformation is revealed by cross-sectional transmission electron microscopy (XTEM) and selected area diffraction (SAD) analyses. Instead XTEM observations suggest that these instabilities resulted from the sudden nucleation of dislocations propagating along the slip systems lying on the {0001} basal planes and the {10 (1) over bar1} pyramidal planes commonly observed in hexagonal compound semiconductors. Based on this scenario, an energetic estimation of dislocation nucleation is made.
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