Related references
Note: Only part of the references are listed.Charge Transport and Degradation in HfO2 and HfOx Dielectrics
Andrea Padovani et al.
IEEE ELECTRON DEVICE LETTERS (2013)
Identifying the First Layer to Fail in Dual-Layer SiOx/HfSiON Gate Dielectric Stacks
Andrea Padovani et al.
IEEE ELECTRON DEVICE LETTERS (2013)
Microscopic Modeling of Electrical Stress-Induced Breakdown in Poly-Crystalline Hafnium Oxide Dielectrics
Luca Vandelli et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2013)
Leakage current through the poly-crystalline HfO2: Trap densities at grains and grain boundaries
Onofrio Pirrotta et al.
JOURNAL OF APPLIED PHYSICS (2013)
Study of preferential localized degradation and breakdown of HfO2/SiOx dielectric stacks at grain boundary sites of polycrystalline HfO2 dielectrics
Kalya Shubhakar et al.
MICROELECTRONIC ENGINEERING (2013)
Resistive switching in hafnium dioxide layers: Local phenomenon at grain boundaries
M. Lanza et al.
APPLIED PHYSICS LETTERS (2012)
Time dependent dielectric breakdown physics - Models revisited
J. W. McPherson
MICROELECTRONICS RELIABILITY (2012)
A Physical Model of the Temperature Dependence of the Current Through SiO2/HfO2 Stacks
L. Vandelli et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2011)
Development of hafnium based high-k materials-A review
J. H. Choi et al.
MATERIALS SCIENCE & ENGINEERING R-REPORTS (2011)
Grain boundary mediated leakage current in polycrystalline HfO2 films
K. McKenna et al.
MICROELECTRONIC ENGINEERING (2011)
Grain boundary-driven leakage path formation in HfO2 dielectrics
G. Bersuker et al.
SOLID-STATE ELECTRONICS (2011)
Dielectric breakdown in polycrystalline hafnium oxide gate dielectrics investigated by conductive atomic force microscopy
V. Iglesias et al.
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B (2011)
The interaction of oxygen vacancies with grain boundaries in monoclinic HfO2
Keith McKenna et al.
APPLIED PHYSICS LETTERS (2009)
Spectroscopic properties of oxygen vacancies in monoclinic HfO2 calculated with periodic and embedded cluster density functional theory
D. Munoz Ramo et al.
PHYSICAL REVIEW B (2007)
The effect of interfacial layer properties on the performance of Hf-based gate stack devices
G. Bersuker et al.
JOURNAL OF APPLIED PHYSICS (2006)
Electron trap generation in high-k gate stacks by constant voltage stress
Chadwin D. Young et al.
IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY (2006)
Breakdowns in high-k gate stacks of nano-scale CMOS devices
KL Pey et al.
MICROELECTRONIC ENGINEERING (2005)
Review on high-k dielectrics reliability issues
G Ribes et al.
IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY (2005)
Reliability characteristics of high-k, dielectrics
YH Kim et al.
MICROELECTRONICS RELIABILITY (2004)
High-κ/metal-gate stack and its MOSFET characteristics
R Chau et al.
IEEE ELECTRON DEVICE LETTERS (2004)
Statistical simulation of leakage currents in MOS and flash memory devices with a new multiphonon trap-assisted tunneling model
L Larcher
IEEE TRANSACTIONS ON ELECTRON DEVICES (2003)
Thermochemical description of dielectric breakdown in high dielectric constant materials
J McPherson et al.
APPLIED PHYSICS LETTERS (2003)
Share Paper
