Semiclassical transport in silicon nanowire FETs including surface roughness

In this paper we investigate the effect of surface roughness scattering on transport in silicon nanowire FETs using a deterministic Boltzmann equation solver previously developed by the authors. We first solve the coupled Schrodinger-Poisson equations to extract the subband profiles along the channel, and then address the transport problem. Some features of the low-field mobility as a function of the wire diameter and gate bias are discussed and the effect of surface roughness on the I-V characteristics is presented.