Journal
NANO ENERGY
Volume 16, Issue -, Pages 310-319Publisher
ELSEVIER SCIENCE BV
DOI: 10.1016/j.nanoen.2015.07.003
Keywords
Graphene; GaAs; van der Waals Schottky diode; Solar cell
Categories
Funding
- National Natural Science Foundation of China [51202216, 61431014, 61171037, 61322501, 61275183, 60990320, 60990322]
- Postdoctoral Science Foundation of China [2013M540491]
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High efficient solar cell is highly demanded for sustainable development of human society, leading to the cutting-edge research on various types of solar cells. The physical picture of graphene/semiconductor van der Waals Schottky diode is unique as Fermi level of graphene can be tuned by gate structure relatively independent of semiconductor substrate. However, the reported gated graphene/semiconductor heterostructure has power conversion efficiency (PCE) normally less than 10%. Herein, utilizing a designed graphene-dielectric-graphene gating structure for graphene/GaAs heterojunction, we have achieved solar cell with PCE of 18.5% and open circuit voltage of 0.96 V. Drift-diffusion simulation results agree well with the experimental data and predict this device structure can work with a PCE above 23.8%. This research opens a door of high efficient solar cell utilizing the graphene/semiconductor heterostructure. (C) 2015 Elsevier Ltd. All rights reserved.
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