Journal
NANO ENERGY
Volume 14, Issue -, Pages 312-339Publisher
ELSEVIER SCIENCE BV
DOI: 10.1016/j.nanoen.2014.11.037
Keywords
Piezotronic effect; Nanowire sensors; Schottky-contact
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Funding
- BES DOE
- NSF
- Airforce
- Samsung
- SKKU (Korea)
- MANA NIMS (Japan)
- Knowledge Innovation Program of the Chinese Academy of Sciences [KJCX2-YW-M13]
- Hightower Chair Foundation
- Thousands Talents Program for pioneer researcher and his innovation team, China
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In this review, we systematically analyze the enhanced performances of Schottky-structured nanowire sensors by the piezotronic effect. Compared with traditional Ohmic-contact nanowire sensing systems, Schottky-contact provides ultra-high sensitivity and superfast response depending on the barrier height at local metal-semiconductor (M-S) interface. Utilizing the strain-induced piezoelectric polarization charges presented at the vicinity of M-S contact, piezotronic effect is applied to tune/control the charge carriers transport process through the interface by modulating the Schottky barrier height (SBH) at local contact, and thus hugely enhances the performances of Schottky-structured sensors. Our results indicate that piezotronic effect is a universal effect that provides an effective approach to improve the sensitivity, resolution, response time and other general properties of Schottky-contact nanowire sensors in different categories, including bio/chemical sensing, gas sensing, humidity sensing, temperature sensing and others. (C) 2014 Elsevier Ltd. All rights reserved.
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