Journal
FRONTIERS OF PHYSICS
Volume 7, Issue 2, Pages 165-174Publisher
HIGHER EDUCATION PRESS
DOI: 10.1007/s11467-011-0190-3
Keywords
topological insulator; electron transport; localization; electron-electron interaction; spin-orbit coupling
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Funding
- National Natural Science Foundation of China [10874210, 10974240]
- State Key Development Program for Basic Research of China (973 Program) [2007CB936800, 2009CB929101]
- Chinese Academy of Sciences
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We review experimental advances in the study of the electron transport in three-dimensional topological insulators with emphasis on experiments that attempted to identify the surface transport. Recent results on transport properties of topological insulator thin films will be discussed in the context of weak antilocalization and electron-electron interactions. Current status of gate-voltage control of the chemical potential in topological insulators will also be described.
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