Journal
MICROMACHINES
Volume 6, Issue 10, Pages 1534-1545Publisher
MDPI
DOI: 10.3390/mi6101437
Keywords
isopropanol evaporation; isopropanol availability; silicon wet etching; microloading effect
Categories
Funding
- FCT (Fundacao para a Ciencia e Tecnologia) [PTDC/EBB-EBI/120334/2010]
- FEDER funds through the Eixo I do Programa Operacional Fatores de Competitividade (POFC) QREN [COMPETE: FCOMP-01-0124-FEDER-020241]
- FCT [SFRH/BD/74975/2010]
- [Pest-OE/CTM/LA0024/2011]
- Fundação para a Ciência e a Tecnologia [SFRH/BD/74975/2010, PEst-OE/CTM/LA0024/2011] Funding Source: FCT
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In this paper, Isopropanol (IPA) availability during the anisotropic etching of silicon in Potassium Hydroxide (KOH) solutions was investigated. Squares of 8 to 40 m were patterned to (100) oriented silicon wafers through DWL (Direct Writing Laser) photolithography. The wet etching process was performed inside an open HDPE (High Density Polyethylene) flask with ultrasonic agitation. IPA volume and evaporation was studied in a dynamic etching process, and subsequent influence on the silicon etching was inspected. For the tested conditions, evaporation rates for water vapor and IPA were determined as approximately 0.0417 mL/min and 0.175 mL/min, respectively. Results demonstrate that IPA availability, and not concentration, plays an important role in the definition of the final structure. Transversal SEM (Scanning Electron Microscopy) analysis demonstrates a correlation between microloading effects (as a consequence of structure spacing) and the angle formed towards the (100) plane.
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