Journal
ADVANCED ENERGY MATERIALS
Volume 8, Issue 29, Pages -Publisher
WILEY-V C H VERLAG GMBH
DOI: 10.1002/aenm.201802120
Keywords
atomic layer deposition; CeO2; InGaN nanowires; nanophotonic chemical sensors; oxygen diffusion
Categories
Funding
- DFG via the GrK (Research training group) [2204]
- Ramon y Cajal program [RYC-2013-12448]
- Spanish Ministry of Economy and Competitiveness, through the Severo Ochoa Programme for Centres of Excellence in RD [SEV- 2015-0496]
- AEI/FEDER,UE [MAT2017-83169-R]
- COST (European Cooperation in Science and Technology) [COST Action MP1402]
- Programa Internacional de Becas 'la Caixa'-Severo Ochoa
- Generalitat de Catalunya [2017 SGR 327]
- Spanish MINECO project [ENE2017-85087-C3]
- Severo Ochoa Programme (MINECO) [SEV-2013-0295]
- CERCA Programme /Generalitat de Catalunya
- European Union [654360 NFFA-Europe]
Ask authors/readers for more resources
An optical in situ strategy for the analysis of oxygen diffusion in ultrathin ceria layers with a thickness of 2-10 nm at temperatures between 50 and 200 degrees C is presented, which allows for the determination of diffusion coefficients. This method is based on the sensitivity of the photoluminescence (PL) intensity of InGaN nanowires to adsorbed oxygen. The oxygen diffusion through an ultrathin CeO2 coating deposited on the InGaN nanowires is monitored by analyzing the transient PL behavior of the InGaN nanowires, which responds to changes of the oxygen concentration in the environment when the corresponding oxygen concentration is established at the CeO2/InGaN interface due to diffusion through the coating. Quantitative evaluation of the oxygen diffusion in CeO2 based on a model considering Langmuir Adsorption and recombination yields a diffusion coefficient D of (2.55 +/- 0.05) x 10(-16) cm(2) s(-1) at a temperature of 100 degrees C. Temperature-dependent measurements reveal an Arrhenius type behavior of D with an activation energy of (0.28 +/- 0.04) eV. In contrast, no oxygen diffusion is detected for an ultrathin layer (5 nm) of Al2O3, which is known as a poor oxygen ion conductor within the analyzed temperature regime.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available