Journal
ADVANCED ENERGY MATERIALS
Volume 2, Issue 10, Pages 1218-1225Publisher
WILEY-V C H VERLAG GMBH
DOI: 10.1002/aenm.201200083
Keywords
energy conversion; narrow gap semiconductors; PbTe; SnTe; p-type semiconductors
Categories
Funding
- Revolutionary Materials for Solid State Energy Conversion, an Energy Frontier Research Center
- U.S. Department of Energy, Office of Science, Office of Basic Energy Sciences [DE-SC0001054]
- Basic Science Research Program through the National Research Foundation of Korea [20110003767]
- Nano Material Technology Development Program through the National Research Foundation of Korea(NRF)
- Ministry of Education, Science and Technology, Korea [20110030147]
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The effects of Cd-doping on the thermoelectric properties of Sn1xPbxTe are investigated and compared to the properties of the corresponding Sn1xPbxTe solid solutions. The addition of Cd results in a reduction in the carrier concentration and changes in the physical properties, as well as in the conduction type of Sn1xPbxTe. A significant increase in the power factor accompanied by a reduction in the thermal conductivity result in a higher figure of merit (ZT) for (Sn1xPbx)0.97Cd0.03Te than that of undoped Sn1xPbxTe. The maximum ZT (similar to 0.7) values are observed for p-type material with x = 0.36 at 560 K. Much higher values (ZT similar to 1.2 at 560 K for x = 0.73) are obtained on n-type samples.
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