Journal
ADVANCED ENERGY MATERIALS
Volume 1, Issue 6, Pages 1116-1125Publisher
WILEY-V C H VERLAG GMBH
DOI: 10.1002/aenm.201100330
Keywords
atomic layer deposition; electro-optical materials; photovoltaic materials; thin films
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Funding
- Dreyfus Foundation, Saint Gobain
- National Science Foundation (NSF) [CBET-1032955]
- NSF [ECS-0335765]
- Development and Promotion of Science and Technology Talents Project (DPST), Thailand
- Div Of Chem, Bioeng, Env, & Transp Sys
- Directorate For Engineering [1032955] Funding Source: National Science Foundation
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Thin film solar cells made from earth-abundant, non-toxic materials are needed to replace the current technology that uses Cu(In,Ga)(S,Se)2 and CdTe, which contain scarce and toxic elements. One promising candidate absorber material is tin monosulfide (SnS). In this report, pure, stoichiometric, single-phase SnS films were obtained by atomic layer deposition (ALD) using the reaction of bis(N,N'-diisopropylacetamidinato)tin(II) [Sn(MeC(N-iPr)2)2] and hydrogen sulfide (H2S) at low temperatures (100 to 200 degrees C). The direct optical band gap of SnS is around 1.3 eV and strong optical absorption (a > 104 cm-1) is observed throughout the visible and near-infrared spectral regions. The films are p-type semiconductors with carrier concentration on the order of 1016 cm-3 and hole mobility 0.8215.3 cm2V-1s-1 in the plane of the films. The electrical properties are anisotropic, with three times higher mobility in the direction through the film, compared to the in-plane direction.
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