4.8 Article

Role of dimensional crossover on spin-orbit torque efficiency in magnetic insulator thin films

Journal

NATURE COMMUNICATIONS
Volume 9, Issue -, Pages -

Publisher

NATURE PUBLISHING GROUP
DOI: 10.1038/s41467-018-06059-7

Keywords

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Funding

  1. Spins and Heat in Nanoscale Electronic Systems (SHINES), an Energy Frontier Research Center - US Department of Energy (DOE), Office of Science, Basic Energy Sciences (BES) [DE-SC0012670]
  2. Function Accelerated nanoMaterial Engineering (FAME) Center, one of the six center of Semiconductor Technology Advanced Research network (STARnet), a Semiconductor Research Corporation (SRC) program - Microelectronics Advanced Research Corporation (MARCO)
  3. Center for Spintronic Materials, Interfaces and Novel Architectures (C-SPIN), one of the six center of Semiconductor Technology Advanced Research network (STARnet), a Semiconductor Research Corporation (SRC) program - Microelectronics Advanced Research Cor
  4. Defense Advanced Research Projects Agency (DARPA)
  5. National Natural Science Foundation of China (NSFC)-Science Foundation Ireland (SFI) Partnership Programme [51861135104]
  6. 1000 Youth Talents Program

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Magnetic insulators (MIs) attract tremendous interest for spintronic applications due to low Gilbert damping and the absence of Ohmic loss. Spin-orbit torques (SOTs) on Mls are more intriguing than magnetic metals since SOTs cannot be transferred to Mls through direct injection of electron spins. Understanding of SOTs on Mls remains elusive, especially how SOTs scale with the MI film thickness. Here, we observe the critical role of dimensionality on the SOT efficiency by studying the MI layer thickness-dependent SOT efficiency in tungsten/thulium iron garnet (W/TmIG) bilayers. We show that the TmIG thin film evolves from two-dimensional to three-dimensional magnetic phase transitions as the thickness increases. We report the significant enhancement of the measured SOT efficiency as the TmIG thickness increases, which is attributed to the increase of the magnetic moment density. We demonstrate the current-induced SOT switching in the W/TmIG bilayers with a TmIG thickness up to 15 nm.

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