4.8 Article

An upconverted photonic nonvolatile memory

Journal

NATURE COMMUNICATIONS
Volume 5, Issue -, Pages -

Publisher

NATURE PORTFOLIO
DOI: 10.1038/ncomms5720

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Funding

  1. City University of Hong Kong's Strategic Research Grant [7002724]
  2. Research Grants Council of the Hong Kong Special Administrative Region [T23-713/11]
  3. Shenzhen Municipality [JCYJ20120618115445056]
  4. CityU

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Conventional flash memory devices are voltage driven and found to be unsafe for confidential data storage. To ensure the security of the stored data, there is a strong demand for developing novel nonvolatile memory technology for data encryption. Here we show a photonic flash memory device, based on upconversion nanocrystals, which is light driven with a particular narrow width of wavelength in addition to voltage bias. With the help of near-infrared light, we successfully manipulate the multilevel data storage of the flash memory device. These upconverted photonic flash memory devices exhibit high ON/OFF ratio, long retention time and excellent rewritable characteristics.

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