Journal
NATURE COMMUNICATIONS
Volume 5, Issue -, Pages -Publisher
NATURE PUBLISHING GROUP
DOI: 10.1038/ncomms5854
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Funding
- Hong Kong Research Grants Council-General Research Fund Project [401512]
- Chinese University of Hong Kong Focused Investments Scheme
- U.S. Department of Energy, Office of Basic Energy Sciences, Materials Sciences and Engineering Division Award [DE-SC0008145]
- Office of Naval Research [N00014-13-1-0806]
- National Science foundation Division of Materials Research [1405964]
- Direct For Mathematical & Physical Scien [1405964] Funding Source: National Science Foundation
- Division Of Materials Research [1405964] Funding Source: National Science Foundation
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In a semiconductor illuminated by a strong terahertz (THz) field, optically excited electron-hole pairs can recombine to emit light in a broad frequency comb evenly spaced by twice the THz frequency. Such high-order THz sideband generation is of interest both as an example of extreme nonlinear optics and also as a method for ultrafast electro-optical modulation. So far, this phenomenon has only been observed with large field strengths (similar to 10kVcm(-1)), an obstacle for technological applications. Here we predict that bi-layer graphene generates high-order sidebands at much weaker THz fields. We find that a THz field of strength 1 kVcm(-1) can produce a high-sideband spectrum of about 30 THz, 100 times broader than in GaAs. The sidebands are generated despite the absence of classical collisions, with the quantum coherence of the electron-hole pairs enabling recombination. These remarkable features lower the barrier to desktop electro-optical modulation at THz frequencies, facilitating ultrafast optical communications.
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