4.8 Article

Strain and curvature induced evolution of electronic band structures in twisted graphene bilayer

Journal

NATURE COMMUNICATIONS
Volume 4, Issue -, Pages -

Publisher

NATURE PUBLISHING GROUP
DOI: 10.1038/ncomms3159

Keywords

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Funding

  1. National Key Basic Research Program of China [2013CBA01603]
  2. National Natural Science Foundation of China [11004010, 10804010, 10974019, 21073003, 51172029, 91121012]
  3. Fundamental Research Funds for the Central Universities
  4. Ministry of Science and Technology of China [2011CB921903, 2012CB921404, 2013CB921701]

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It is well established that strain and geometry could affect the band structure of graphene monolayer dramatically. Here we study the evolution of local electronic properties of a twisted graphene bilayer induced by a strain and a high curvature, which are found to strongly affect the local band structures of the twisted graphene bilayer. The energy difference of the two low-energy van Hove singularities decreases with increasing lattice deformation and the states condensed into well-defined pseudo-Landau levels, which mimic the quantization of massive chiral fermions in a magnetic field of about 100 T, along a graphene wrinkle. The joint effect of strain and out-of-plane distortion in the graphene wrinkle also results in a valley polarization with a significant gap. These results suggest that strained graphene bilayer could be an ideal platform to realize the high-temperature zero-field quantum valley Hall effect.

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