Journal
NATURE COMMUNICATIONS
Volume 3, Issue -, Pages -Publisher
NATURE PUBLISHING GROUP
DOI: 10.1038/ncomms2286
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Funding
- National Natural Science Foundation of China [51121091, 51072004, 20973007, 21173004, 21222303]
- National Basic Research Programme of China [2013CB932603, 2012CB933404, 2011CB921904, 2011CB933003]
- Scientific Research Foundation for Returned Overseas Chinese Scholars
- State Education Ministry (SRF for ROCS, SEM)
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Device applications of graphene such as ultrafast transistors and photodetectors benefit from the combination of both high-quality p- and n-doped components prepared in a large-scale manner with spatial control and seamless connection. Here we develop a well-controlled chemical vapour deposition process for direct growth of mosaic graphene. Mosaic graphene is produced in large-area monolayers with spatially modulated, stable and uniform doping, and shows considerably high room temperature carrier mobility of similar to 5,000 cm(2)V(-1) s(-1) in intrinsic portion and similar to 2,500 cm(2)V(-1) s(-1) in nitrogen-doped portion. The unchanged crystalline registry during modulation doping indicates the single-crystalline nature of p-n junctions. Efficient hot carrier-assisted photocurrent was generated by laser excitation at the junction under ambient conditions. This study provides a facile avenue for large-scale synthesis of single-crystalline graphene p-n junctions, allowing for batch fabrication and integration of high-efficiency optoelectronic and electronic devices within the atomically thin film.
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