Journal
NATURE COMMUNICATIONS
Volume 1, Issue -, Pages -Publisher
NATURE PUBLISHING GROUP
DOI: 10.1038/ncomms1112
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Funding
- MEXT [22360271, 22015009]
- JSPS
- JSPS-FIRST Program
- Grants-in-Aid for Scientific Research [22360271, 22015009] Funding Source: KAKEN
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Water is composed of two strong electrochemically active agents, H+ and OH- ions, but has not been used as an active electronic material in oxide semiconductors. In this study, we demonstrate that water-infiltrated nanoporous glass electrically switches an oxide semiconductor from insulator to metal. We fabricated a field-effect transistor structure on an oxide semiconductor, SrTiO3, using water-infiltrated nanoporous glass-amorphous 12CaO center dot 7Al(2)O(3)-as the gate insulator. Positive gate voltage, electron accumulation, water electrolysis and electrochemical reduction occur successively on the SrTiO3 surface at room temperature. This leads to the formation of a thin (similar to 3 nm) metal layer with an extremely high electron concentration (10(15)-10(16) cm(-2)), which exhibits exotic thermoelectric behaviour. The electron activity of water as it infiltrates nanoporous glass may find many useful applications in electronics or in energy storage.
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