Journal
FRONTIERS OF PHYSICS IN CHINA
Volume 4, Issue 3, Pages 367-372Publisher
HIGHER EDUCATION PRESS
DOI: 10.1007/s11467-009-0022-x
Keywords
boron-nitride nanoribbons; chemical modification
Categories
Funding
- National Science Foundation [CHE-0427746, CHE-0701540, CMMI-0709333]
- Nebraska Research Initiative
- National Science Foundation of China [20628304]
- Research Computing Facility at University of Nebraska-Lincoln and Holland Supercomputing Center at University of Nebraska-Omaha
Ask authors/readers for more resources
Motivated by recent studies of graphenen nanoribbons (GNRs), we explored electronic properties of pure and chemically modified boron nitride nanoribbons (BNNRs) using the density functional theory method. Pure BNNRs with both edges fully saturated by hydrogen are semiconducting with wide band gaps. Values of the band gap depend on the width and the type of edge. The chemical decoration of BN-NRs' edges with four different functional groups, including -F, -Cl, -OH, and -NO2, was investigated. The band-gap modulation by chemical decoration may be exploited for nanoelectronic applications.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available