Chemical synthesis of high quality epitaxial vanadium dioxide films with sharp electrical and optical switch properties

The effective preparation method of epitaxial VO2 films on the r-Al2O3 substrates based on the MOCVD technique and post-deposition annealing is described. The composition, orientation and morphology of the films obtained were investigated by Raman spectroscopy, XRD, EBSD, XPS, SEM and AFM methods. The samples obtained demonstrate high crystal quality and excellent physical properties: sharp metal-insulator (>10(4) resistance change) and intensive optical reflectivity (IR and THz regions) transitions. The model of VO2 film recrystallization based on the peritectic decomposition of intergrain vanadium oxide phases is proposed.