Thienoisoindigo-based copolymer with fused thieno[3,2-b] thiophene as a donor in thin film transistor applications with high performance

A new thienoisoindigo (TIG)-based copolymer with thieno[3,2-b]thiophene as a donor is synthesized. The copolymer with a short pi-pi stacking distance of 3.43 angstrom exhibits an excellent hole mobility up to 0.69 cm(2) V-1 s(-1) under optimum conditions. This performance is the record value among reported TIG-based transistors.