4.6 Article

Precise control of chemical vapor deposition graphene layer thickness using NixCu1-x alloys

Journal

JOURNAL OF MATERIALS CHEMISTRY C
Volume 3, Issue 7, Pages 1463-1467

Publisher

ROYAL SOC CHEMISTRY
DOI: 10.1039/c4tc01979b

Keywords

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Funding

  1. Defense Acquisition Program Administration [UD130070ID]
  2. National Research Foundation of Korea (NRF) - Ministry of Education [2012R1A1A4A01010951, 2012R1A1A2006742]
  3. National Research Foundation of Korea [2012R1A1A2006742, 2012R1A1A4A01010951] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)

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We investigated a simple but effective method to precisely control the desired number of graphene layers on the NixCu1-x alloy substrates by thermal chemical vapor deposition. Our method could be utilized to precisely control the number of graphene layers without altering growth conditions such as growth temperature and the cooling rate.

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