4.6 Article

A robust ionic liquid-polymer gate insulator for high-performance flexible thin film transistors

Journal

JOURNAL OF MATERIALS CHEMISTRY C
Volume 3, Issue 17, Pages 4239-4243

Publisher

ROYAL SOC CHEMISTRY
DOI: 10.1039/c5tc00067j

Keywords

-

Funding

  1. Basic Research Program of the National Research Foundation (NRF) of Korea [2011-0018113]
  2. Centre for Advanced Soft-Electronics as Global Frontier Project - Ministry of Science, ICT and Future Planning of Korea [2013M3A6A5073177]

Ask authors/readers for more resources

Herein, we propose an ionic liquid-polymer dielectric layer for flexible electronics reinforced by a chemical interaction between the polymer matrix (PVP) and the ionic liquid. Due to the robust structures of the cross-linked PVP matrix and hydrogen bonding between the ionic liquid and PVP, the ionic liquid-PVP (IL-PVP) layer exhibited a good mechanical strength when bending up to 1000 times and a stable thermal behaviour up to 300 degrees C. Furthermore, the IL-PVP dielectric layer showed a high capacitance value of similar to 2 mu F cm(-2) and was operated well as a gate insulator for flexible ZnO thin film transistors with a linear field-effect mobility of similar to 3.3 cm(2) V-1 s(-1) at a gate bias of 3 V.

Authors

I am an author on this paper
Click your name to claim this paper and add it to your profile.

Reviews

Primary Rating

4.6
Not enough ratings

Secondary Ratings

Novelty
-
Significance
-
Scientific rigor
-
Rate this paper

Recommended

No Data Available
No Data Available