Inorganic-organic hybrid polymer with multiple redox for high-density data storage

Although organic multilevel resistance memories have attracted much attention for potential realization of the exponentially-increasing density of data storage, the ambiguous structure-property relationship and the unclear switching mechanism impeded further development of multilevel resistance memory devices. Therefore, it is very urgent to ingeniously design multilevel memory materials with a certain switching mechanism. In this contribution, we have employed a multi-redox (multiple barriers) polyoxometalate-based inorganic-organic hybrid polymer (whose effective carriers are electrically controllable) to realize a ternary resistance switching memory (multilevel memories). We do believe that the as-designed inorganic-organic polymer can integrate the multi-redox states of the POM and the processability of flexible polymers together. The as-fabricated multilevel memory devices exhibit rewriteable switching properties among three redox states by applying different RESET voltages, good endurance with distinct operation windows, and tong retention. Our results could provide a new strategy to design controllable multilevel resistance memories with excellent performance.