4.4 Article

Semiconductor heterostructures and optimization of light-trapping structures for efficient thin-film solar cells

Journal

JOURNAL OF OPTICS
Volume 14, Issue 2, Pages -

Publisher

IOP PUBLISHING LTD
DOI: 10.1088/2040-8978/14/2/024007

Keywords

quantum-well; quantum-dot; scattering; diffraction; thin-film; GaAs; InAs; photovoltaic; solar cell

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Funding

  1. NASA GSRP
  2. National Science Foundation [DMR 0806755, DMR 1066430]
  3. Department of Energy [DE-FG36-08G018016]
  4. Judson S Swearingen Regents Chair in Engineering at the University of Texas at Austin

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Sub-wavelength photonic structures and nanoscale materials have the potential to greatly improve the efficiencies of solar cells by enabling maximum absorption of sunlight. Semiconductor heterostructures provide versatile opportunities for improving absorption of infrared radiation in photovoltaic devices, which accounts for half of the power in the solar spectrum. These ideas can be combined in quantum-well solar cells and related structures in which sub-wavelength metal and dielectric scattering elements are integrated for light trapping. Measurements and simulations of GaAs solar cells with less than one micron of active material demonstrate the benefits of incorporating In(Ga) As quantum-wells and quantum-dots to improve their performance. Simulations that incorporate a realistic model of absorption in quantum-wells show that the use of broadband photonic structures with such devices can substantially improve the benefit of incorporating heterostructures, enabling meaningful improvements in their performance.

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