Journal
JOURNAL OF MATERIALS CHEMISTRY A
Volume 3, Issue 47, Pages 24163-24168Publisher
ROYAL SOC CHEMISTRY
DOI: 10.1039/c5ta06574g
Keywords
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Funding
- National High Technology Research and Development Program [2015AA050601]
- National Natural Science Foundation of China [61376013, 91433203, J1210061]
- Fundamental Research Funds for the Central Universities [2014202020207]
- U.S. Department of Energy (DOE) SunShot Initiative under the Next Generation Photovoltaics 3 program [DE-FOA: 0990-1553]
- Ohio Research Scholar Program
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Efficient lead halide perovskite solar cells have been realized using SnO2 as electron selective layers (ESLs). Here, we report on the effects of the annealing temperature of solution-processed SnO2 ESLs on the performance of perovskite solar cells. We find that the cells using low-temperature annealed SnO2 (LT-SnO2) ESLs outperform the cells using high-temperature annealed SnO2 (HT-SnO2) ESLs, exhibiting higher open circuit voltages and fill factors. Structural, electrical, optical, and electrochemical characterizations reveal the origin of the performance differences: LT-SnO2 produces better film coverage, wider band gap, and lower electron density than that of HT-SnO2. The confluence of these properties results in more effective transportation of electrons and blocking of holes, leading to lower interface recombination. Therefore, LT-SnO2 ESLs are preferred for manufacturing perovskite solar cells on flexible substrates.
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