Journal
JOURNAL OF MATERIALS CHEMISTRY A
Volume 3, Issue 26, Pages 13819-13826Publisher
ROYAL SOC CHEMISTRY
DOI: 10.1039/c5ta02257f
Keywords
-
Funding
- National Natural Science Foundation [51172187]
- SPDRF [20116102130002]
- 111 Program of MOE [B08040]
- Xi'an Science and Technology Foundation [XBCL-1-08]
- SKLP Foundation [KP201421]
- Fundamental Research Funds for the Central Universities of China [3102014JGY01004]
Ask authors/readers for more resources
Nitrogen self-doped graphitic carbon nitride (C3N4+x) was successfully synthesized by the co-thermal condensation of the precursor with a nitrogen-rich additive. The resultant self-doped semiconductor was characterized by X-ray photoelectron spectroscopy (XPS), which indicated that the nitrogen atom substituted the sp(2) carbon atom. The photocatalytic hydrogen evolution was systematically evaluated under visible light irradiation (lambda > 400 nm). The average hydrogen evolution rate for C3N4+x was 1.8 times higher than that of pristine graphitic carbon nitride, and the superiority lay in greatly improved optical, emission and electronic properties of the nitrogen modified carbon nitride. This study filled the research gap of self-doping for 2D polymeric carbon nitride and will stimulate intensive investigations in the further improvement of photocatalytic hydrogen evolution.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available